- patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability - halogen-free according to iec 61249-2-21 definition molding compound meets ul 94 v-0 flammability rating packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test mounting torque: 0.56 nm max. v rrm v dv/dt v/ s typ max typ max typ max i f = 5a 0.59 - 0.66 - 0.74 - i f = 10a 0.71 0.79 0.78 0.86 0.82 0.92 i f = 5a 0.53 - 0.56 - 0.60 - i f = 10a 0.62 0.70 0.64 0.72 0.68 0.78 t j = 25c - 150 - 150 - 100 a t j = 125c 818818212ma r jc c/w t j c t stg c document number: ds_d1412011 version: a14 typical thermal resistance per diode i r maximum repetitive peak reverse voltage 150 instantaneous forward voltage per diode (note1) maximum ratings and electrical characteristics (t a = 25c unless otherwise noted) per diode t j = 125c - 55 to +150 120 10000 120 unit v f tsf20h 120c-s - 55 to +150 4.5 t j = 25c parameter TSF20H100C-S thru tsf20h150c-s taiwan semiconductor trench schottky rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec maximum average forward rectified current a tsf20h 150c-s typical applications case: ito-220ab polarity: as marked trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. tsf20h 100c-s weight: 1.7 g (approximately) mechanical data voltage rate of change (rated v r ) 100 per device i f(av) 10 20 ito-220ab symbol storage temperature range note 1: pulse test with pulse width=300 s, 1% duty cycle instantaneous reverse current per diode at rated reverse voltage i fsm a v peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode operating junction temperature range
document number: ds_d1412011 version: a14 tsf20h150c-s c0g part no. tsf20l150c-s note 1: " xxx" defi nes voltage from 100v (TSF20H100C-S) to 150v (tsf20h150c-s) 50 / tube green compound description c0 packing code g ratings and characteristics curves (t a = 25c unless otherwise noted) TSF20H100C-S thru tsf20h150c-s taiwan semiconductor ordering information packing package part no. packing code packing code suffix tsf20hxxxc-s (note 1) ito-220ab example packing code suffix c0 g preferred part no. 0 5 10 15 20 25 0 255075100125150 fig. 1 forward current derating curve with heatsink 3in x 5in x 0.25in al-plate case temperature ( o c) average forward current (a) tsf20h150c-s TSF20H100C-S~120c-s 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 fig. 2 typical forward characteristics TSF20H100C-S instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 3 typical forward characteristics tsf20h120c-s instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 4 typical forward characteristics tsf20h150c-s instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c
document number: ds_d1412011 version: a14 TSF20H100C-S thru tsf20h150c-s taiwan semiconductor 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 7 typical reverse characteristics tsf20h150c-s percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 5 typical reverse characteristics TSF20H100C-S percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 10 100 1000 10000 0.1 1 10 100 fig. 8 typical junction capacitance f=1.0mhz vsig=50mvp-p junction capacitance (pf) reverse voltage (v) tsf20h120c-s tsf20h150c-s TSF20H100C-S 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 6 typical reverse characteristics tsf20h120c-s percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c
dim. min max min max a 4.30 4.70 0.17 0.19 b 2.50 3.16 0.10 0.12 c 2.30 2.96 0.09 0.12 d 0.46 0.76 0.02 0.03 e 6.30 6.90 0.25 0.27 f 9.60 10.30 0.38 0.41 g 3.00 3.40 0.12 0.13 h 0.95 1.45 0.04 0.06 i 0.50 0.90 0.02 0.04 j 2.40 3.20 0.09 0.13 k 14.80 15.50 0.58 0.61 l - 4.10 - 0.16 m 12.60 13.80 0.50 0.54 n - 1.80 - 0.07 o 2.41 2.67 0.09 0.11 marking diagram p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1412011 version: a14 TSF20H100C-S thru tsf20h150c-s taiwan semiconductor package outline dimensions ito-220ab unit (mm) unit (inch)
creat by art document number: ds_d1412011 version: a14 the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. TSF20H100C-S thru tsf20h150c-s taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
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